As larger capacity is required to modern semiconductor non-volatile memories, technical and physical limits arise, which the conventional scaling down of the photolithographic technology will hardly overcome. One of the most promising approaches for future highdensity mass storage is represented by the Resistive switching Random Access non-volatile Memories (ReRAM). The functioning of such memories is based on the switching between high and low conductive states under applied electrical pulses. In particular, nanoscaled Metal/Oxide/Metal (MOM) heterostructures are currently investigated as possible building blocks for memory devices beyond the 16 nm technology node (1). Whereas the resistive switching behavior of MOM thin films has been widely investigated, a better characterization and understanding of switching phenomena at the nanoscale is still required.In the present study, the …