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Type: 
Journal
Description: 
The electronic band line‐up between a uniform 2D silicon layer and a MoS2 substrate is shown to result in a distortion of the MoS2 bands. This effect is reflected in the admittance and electrical transport responses measured from the field‐effect transistor incorporating the Si/MoS2 heterosheet interface and fabricated from MoS2 multilayer flakes on SiO2/Si++ substrates. In particular, the gate modulation of the capacitance curve and the observation of a double‐peak feature in the transconductance profile make evidence of the built‐in of two active channels in the transistor: one at the MoS2/SiO2 interface and the other at the Si/MoS2 heterosheet interface. The emergence of a gate modulated conductive channel at the Si/MoS2 heterosheet interface is rationalized in terms of an effective electron accumulation at the Si/MoS2 interface that is consistent with the electronic band bending deduced from high‐resolution …
Publisher: 
Publication date: 
1 May 2016
Authors: 
Biblio References: 
Volume: 3 Issue: 10 Pages: 1500619
Origin: 
Advanced Materials Interfaces