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Control of magnetic domain-wall motion in nanowires has attracted great interest due to the possibility to develop nonvolatile memory and logic circuits. We show that efficient domain-wall pinning can be engineered by growing Co− Fe− B/Mg O ultra-thin magnetic films with perpendicular anisotropy on a patterned substrate exhibiting subnanometer steps modulation. The ratio of domain-wall velocity along and across the steps is found to be as high as 70, which corresponds to a variation of the depinning field up to 7 mT demonstrating a very efficient storing pinning scheme. In addition, we demonstrate very efficient domain-wall motion along the 70 nm conducts separating the steps. Our approach is compatible with nanoscale devices and large-scale mass production, opening new opportunities for domain-wall storage applications.
American Physical Society
Publication date: 
21 Dec 2018

A Digiacomo, R Mantovan, N Vernier, T Devolder, K Garcia, G Tallarida, M Fanciulli, A Lamperti, B Ocker, L Baldi, M Mariani, D Ravelosona

Biblio References: 
Volume: 10 Issue: 6 Pages: 064053
Physical Review Applied