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Type: 
Journal
Description: 
In the quest for superlattices with engineered interfaces for disruptive applications such as neuromorphic computing, we present a dedicated study on the epitaxial growth of nominal GeTe/Sb2Te3 chalcogenide superlattices (CSL) on the Sb passivated Si(111) − (√3 × √3)R30°− Sb surface. Intermixing at the GeTe and Sb2Te3 interface is assessed by X-Ray diffraction and reflectivity. A new growth procedure with element flux interruptions is proposed to engineer the degree of intermixing and the tailoring of the GeSbTe layers into Sb-rich compositions.
Publisher: 
Pergamon
Publication date: 
1 Jan 2022
Authors: 

R Wang, R Calarco, F Arciprete, V Bragaglia

Biblio References: 
Volume: 137 Pages: 106244
Origin: 
Materials Science in Semiconductor Processing