-A A +A
Type: 
Conference
Description: 
Replacing the tunnel oxide of non-volatile memories by a high-k dielectric is addressed in this paper. This work reports in its first part an experimental study of conduction and trapping in Al 2 O 3 layers. The experimental data of these layers is then integrated in a novel endurance model suitable for flash memories with high-k tunnel oxide. Simulation results show that low (+8/-7V) operating voltages can be used to obtain large threshold voltage shifts, and despite a great amount of trapped negative charges (several 10 12 /cm 2 ), the programming window isn't closed after 10 7 write/erase (W/E) cycles
Publisher: 
IEEE
Publication date: 
19 Sep 2006
Authors: 

J Buckley, G Molas, M Gély, F Martin, B De Salvo, S Deleonibus, G Pananakakis, C Bongiorno, S Lombardo

Biblio References: 
Pages: 246-249
Origin: 
2006 European Solid-State Device Research Conference