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Type: 
Conference
Description: 
The paper reports the mechanical properties of 4H-SiC die with different thicknesses, that have been determined through a 3-point bend (3-PB) test. In particular, it reports 1) the measurement of the failure strength of thin 4H-SiC rectangular die; 2) the Weibull analysis of the failure strength of 4H-SiC die, exploited to determine the maximal load that can be applied to the die, without any breakage; 3) the measure of 244±15 GPa for the effective Young modulus E of SiC die, gained from the 3-PB test elaborations.
Publisher: 
IEEE
Publication date: 
19 Apr 2021
Authors: 

Antonio Landi, Aye Aye Mon, Laura Liaci, Alessandro Sitta, Michele Calabretta, Antonella Sciuto, Giuseppe D’Arrigo, Marco Renna, Vincenzo Vinciguerra

Biblio References: 
Pages: 1-6
Origin: 
2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)