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Self-assembled GaN and InN nanowires (NWs) were synthesized by radio frequency Plasma-Assisted Molecular Beam Epitaxy (PAMBE) without external catalyst. NWs of micrometers length and diameter in the range of 20–200 nm are fabricated using this method under N-rich conditions. Driving mechanisms of the NW nucleation and the growth are discussed. The NWs have been investigated using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and photoluminescence (PL). Electric and photoelectric measurements on single wire devices have been performed as well. We establish that the dark, Ultraviolet (UV) photo-current and band-edge absorption tails in GaN NWs are strongly dependent on wire diameter. A model of surface Fermi level pinning and Franz-Keldysh effect in carrier depletion region at wire surface were …
Springer, Berlin, Heidelberg
Publication date: 
1 Jan 2010

Toma Stoica, Eli Sutter, Raffaella Calarco

Biblio References: 
Pages: 73-96
Trends in Nanophysics