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Cerium oxide (CeO2) thin films have been grown by metal-organic chemical vapor deposition on AlGaN/GaN heterostructures and their insulating properties as gate dielectric layer have been explored. The deposited thin films have been found to be textured on the GaN based heterostructures and exhibited a permittivity of 26. This high permittivity value and large band gap are certainly advantageous with respect to other reported materials for the metal insulator semiconductor high electron mobility transistor application. The reduced leakage current density clearly suggests that these CeO2 films are very promising as gate dielectric for AlGaN/GaN transistors low power consumption technology.
American Institute of Physics
Publication date: 
9 Sep 2013

P Fiorenza, G Greco, G Fisichella, F Roccaforte, G Malandrino, R Lo Nigro

Biblio References: 
Volume: 103 Issue: 11 Pages: 112905
Applied Physics Letters