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Type: 
Journal
Description: 
We have studied the influence of defects on silicon heterojunction solar cell efficiency by a method based on the comparison of electroluminescence (EL) image data with a finite element circuit model of solar cell efficiency. For this purpose, a general curve that relates the solar cell efficiency to a parameter representative of the defect strength, i.e., the loss of VOC, ∆VOC, from EL maps is obtained, and it is shown that the efficiency can be predicted with a good degree of confidence.
Publisher: 
AIP Publishing LLC
Publication date: 
1 Jan 2021
Authors: 

Luca Zumbo, Jean-Francois Lerat, Carmelo Connelli, Claudio Colletti, Cosimo Gerardi, Salvatore Lombardo

Biblio References: 
Volume: 11 Issue: 1 Pages: 015044
Origin: 
AIP Advances