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Rare earth oxides (REOs) have lately received extensive attention in relation to the continuous scaling down of non-volatile memories (NVMs). In particular, La2O3 films are promising for integration into future NVMs because they are expected to crystallize above 400° C in the hexagonal phase (h-La2O3) which has a higher κ value than the cubic phase (c-La2O3) in which most of REOs crystallize. In this work, La2O3 films are grown on Si by atomic layer deposition using La (C5H5) 3 and H2O. Within the framework of the h-La2O3 formation, we systematically study the crystallographic evolution of La2O3 films versus annealing temperature (200–600° C) by Fourier transform infrared spectroscopy (FTIR) and grazing incidence X-ray diffraction (GIXRD). As-grown films are chemically unstable in air since a rapid transformation into monoclinic LaO (OH) and hexagonal La (OH) 3 occurs …
Publication date: 
31 Dec 2008

D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, S Schamm, PE Coulon, M Fanciulli

Biblio References: 
Volume: 85 Issue: 12 Pages: 2411-2413
Microelectronic Engineering