In case of Al+ implanted 4H-SiC, a post implantation annealing temperature of 1950 C has the beneficial effect of maximizing both the electrical activation of implanted Al and the reordering of the lattice damaged by the Al ions. However, the formation of extended defect in the implanted layers and that of carbon vacancies in the n-type epi-layers below the implanted layers may be hardly avoided. This study contains the results of structural and electrical investigation showing that:(i) on increasing the implanted Al concentration ...
The Electrochemical Society
23 Aug 2016
Volume: 75 Issue: 12 Pages: 171-181