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In this work we report two promising approaches to control dopant diffusion and promote dopant incorporation and electrical activation in Ge. The former is based on reducing the vacancy concentration, and hence the dopant diffusivity, by increasing the interstitial concentration through high-fluence O implant and the formation of stable GeO2 complexes. The other approach exploits the non equilibrium processes occurring under laser annealing, that lead to the incorporation (and electrical activation) of dopants to ...
The Electrochemical Society
Publication date: 
15 Mar 2013

Elena Bruno, Giorgia G Scapellato, Enrico Napolitani, Salvatore Mirabella, Simona Boninelli, Antonino La Magna, Massimo Mastromatteo, Davide De Salvador, Guglielmo Fortunato, Vittorio Privitera, Francesco Priolo

Biblio References: 
Volume: 50 Issue: 5 Pages: 89-103
ECS Transactions