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Type: 
Conference
Description: 
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2×10 16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.
Publisher: 
IEEE
Publication date: 
1 Jan 2015
Authors: 

F Moscatelli, P Maccagnani, D Passeri, GM Bilei, L Servoli, A Morozzi, G-F Dalla Betta, Roberto Mendicino, Maurizio Boscardin, Nicola Zorzi

Biblio References: 
Pages: 1-6
Origin: 
2015 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)