-A A +A
112 Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC and of lateral inhomogeneities in the number of graphene layers on the local resistance of epitaxial graphene. The results of these nanoscale investigations have been also compared with the results of the electrical characterization of macroscopic device structures fabricated with epitaxial graphene, clarifying the origin of some commonly observed effects, such as the anisotropic current transport with respect to steps orientation. Local transport measurements (in the diffusive regime) indicated a significantly higher electron mean free path for graphene residing on (11-2n) SiC facets than on the (0001) basal plane, consistently with recent reports on exceptional ballistic transport in epitaxial graphene nanoribbons.
Pan Stanford
Publication date: 
19 Jan 2018
Biblio References: 
Pages: 123-154
Epitaxial Graphene on Silicon Carbide