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Type: 
Book
Description: 
The accurate measurement of chemistry of epitaxial layers by high angle annular dark field imaging requires knowledge of the scanning transmission electron microscopy specimen thickness. Here, it is shown how the study of the intensity of the Fourier coefficients of high angle annular dark field images, as a function of the objective lens defocus, can be used to measure the specimen thickness with the highest accuracy in the location of the area of interest.
Publisher: 
Springer, Dordrecht
Publication date: 
1 Jan 2008
Authors: 

V Grillo, E Carlino

Biblio References: 
Pages: 165-168
Origin: 
Microscopy of Semiconducting Materials 2007