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Type: 
Conference
Description: 
Incorporating InGaAs/GaAs/AlGaAs heterostructures creates a bi-layer electron and hole plasma producing a planar, top-illuminated photodetector with< 2.5-ps time response and sensitive to< 1-microWatt optical power, and can operate without applied bias.
Publisher: 
Optical Society of America
Publication date: 
6 Oct 2013
Authors: 

Marc Currie, Fabio Quaranta, Adriano Cola, Bahram Nabet

Biblio References: 
Pages: FTu1E. 4
Origin: 
Frontiers in Optics