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Part 2-Chapter 5-Processing of SiC-5.3 Oxides and Other Dielectrics-Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

Type: 
Journal
Description: 
Publisher: 
Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-
Publication date: 
1 Jan 2006
Authors: 

A Moscatelli, F Poggi, A Marino, G Scorzoni, R Sanmartin, M Nipoti

Biblio References: 
Volume: 527529 Pages: 979-982
Origin: 
Materials Science Forum
Link: 
http://scholar.google.com/scholar?cluster=16975358014509545621&hl=en&oi=scholarr

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