[en] Bottom-up assembled nanowires receive an increasing interest as possible candidates for future semiconductor nanoscale devices. Especially InN nanowires are interesting due to their surface accumulation layer which inhibits Schottky barriers. Yet, contact resistances prove to be spread in a wide range as can be shown in multi-terminal measurements. At low temperatures phase-coherence leads to universal conductance fluctuations in the magnetoconductance. While they are fully symmetric in a two-terminal setup this feature is gradually lost when turning to three-or four-terminal measurements. Using the latter configuration the temperature dependence of the electron phase-coherence in the nanowire itself can be determined, ie without any contact resistance contribution.
1 Jan 2009
Verhandlungen der Deutschen Physikalischen Gesellschaft