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Type: 
Conference
Description: 
Article PreviewArticle PreviewArticle PreviewPost-implant annealing of Al implanted 4H-SiC has been performed in the temperature range from 1600 C to 1750 C. Annealing was conducted in a hot-wall CVD reactor using a silanerich ambient. Ar was used as the carrier gas to deliver the silane to the annealing zone where the sample was heated via RF induction. The resulting annealed surfaces exhibited a step-bunch free, smooth morphology when viewed on SEM and AFM. The maximum surface roughness as measured via AFM was 0.65 nm RMS for the sample annealed at 1750 C.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2006
Authors: 

Shailaja P Rao, Fabio Bergamini, Roberta Nipoti, AM Hoff, E Oborina, Stephen E Saddow

Biblio References: 
Volume: 527 Pages: 839-842
Origin: 
Materials science forum