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Summary form only given. Resistive switching (RS) phenomena in oxides have received a large interest for ultra-scaled and high-density non-volatile memories, and many prototypes have been proposed at industrial level. Recently, RS have been also exploited for new type of applications, such as reconfigurable logic and synaptic electronics. In the latter field, the interest is towards RS devices which can be used to fabricate artificial synapses, able to emulate the synaptic functions of biological synapses, and to be integrated with standard CMOS circuits to build neuromorphic systems. These RS devices, also named memristive systems, are of particular interest due to their simple two terminal structure, low power operation, high-scalability, low thermal budget fabrication and, depending on material system, easy integration into CMOS based platform. This talk will first introduce the current state of the art and …
Publication date: 
18 May 2015
Biblio References: 
Pages: 213-214
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)