We have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The lattice location of the Fe atoms and the effect of postimplantation annealing treatments have been studied by PIXE-channeling measurements. I-V, CV and DLTS analyses have been used to characterize the electrical properties related to the presence Fe2+/3+ deep traps. The results show that the background n-doping density play a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers. The same effect has been observed in samples containing Fe concentrations both above and below the Fe solubility threshold in InP.