Self-heating effects are investigated in polycrystalline silicon thin film transistors by combining experimental measurements and two-dimensional numerical simulations. From the thermodynamic model the temperature distribution was extracted and found rather uniform along the channel. This allowed the authors to introduce a simplified method to determine the channel temperature when the device is affected by self-heating effects.
American Institute of Physics
28 Aug 2006
Volume: 89 Issue: 9 Pages: 093509
Applied physics letters