Studies in the literature have shown how the different processing steps can have an impact on the electronic properties of SiC devices. In this contribution, we will review the importance of preserving the crystalline integrity of SiC epilayers through the major processing steps like etching, implantation and oxidation. It will be shown that the major cause for SiC device failures, eg bipolar degradation and low field effect mobility, is the presence of carbon-related defects like the carbon vacancy (V C) and carbon interstitials (C i). At last, the different techniques devised to reduce the presence of these harmful defects will also be reviewed.