Type:
Conference
Description:
In this paper we propose the design of a silicon resonant cavity enhanced Schottky photodetector based on the internal photoemission effect, working at 1.55 /spl mu/m, and entirely compatible with ULSI silicon technology.
Publisher:
IEEE
Publication date:
21 Sep 2005
Biblio References:
Pages: 143-145
Origin:
IEEE International Conference on Group IV Photonics, 2005. 2nd