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Type: 
Journal
Description: 
This paper reports on the influence of material defects on the electrical behaviour of AlGaN/GaN heterostructures grown onto off-axis 4H-SiC. A structural characterization revealed the presence of near-surface V-shaped defects, mostly oriented along the miscut direction [11-20]. High electron mobility transistors with the channel oriented along this direction showed a preferential conduction, while a significant reduction of the drain current occurred only along the orthogonal direction. An electrical analysis allowed us to demonstrate the anisotropy of the mobility of the two-dimensional electron gas.These results are important to predict the optimal device design in AlGaN/GaN heterostructures grown onto misoriented 4H-SiC substrates.
Publisher: 
Springer-Verlag
Publication date: 
1 Jul 2010
Authors: 

Fabrizio Roccaforte, Ming-Hung Weng, Corrado Bongiorno, Filippo Giannazzo, Ferdinando Iucolano, Vito Raineri

Biblio References: 
Volume: 100 Issue: 1 Pages: 197-202
Origin: 
Applied Physics A