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We report on the effect of the surface roughness of Pd nanostructures on the electrical characteristics (Schottky barrier height) of Pd nanostructures/SiC nano-contacts as probed by conductive atomic force microscopy.We produced Pd nanostructures on 6H-SiC surface by thermal-induced dewetting of a nanoscale-thick deposited Pd film. We changed the Pd nanostructures mean diameter and mean surface roughness by controlling the annealing temperature. Scanning Electron Microscopy and Atomic Force Microscopy allowed us to quantify and in various annealing conditions. In addition, current–voltage characteristics were acquired on single Pd nanostructure/SiC contacts by placing the tip of Conductive Atomic Force Microscopy on the Pd nanostructure. Typical rectifying Schottky characteristics were recorded from which the Schottky barrier heights ΦB were extracted. For ballistic Pd nanostructures …
Publication date: 
1 Nov 2020
Biblio References: 
Volume: 529 Pages: 147142
Applied Surface Science