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Type: 
Journal
Description: 
A systematic study was performed on the effects of surface treatments before Atomic Layer Deposition (ALD) growth of Al 2 O 3 thin films on (0001) AlGaN/GaN substrate. The AlGaN/GaN surface was treated either with: H 2 O 2: H 2 SO 4 (A treatment) and H 2 O 2: H 2 SO 4+ H 2 O: HF (B treatment). After surface wet-treatments, Al 2 O 3 was immediately deposited at 250 C by Plasma Enhanced ALD from trimethylaluminum precursor. The film thickness was measured to be about 27 nm using transmission electron microscopy and ...
Publisher: 
Elsevier
Publication date: 
30 Oct 2016
Biblio References: 
Volume: 617 Pages: 138-142
Origin: 
Thin Solid Films