The Fe 3 Si thin film is a good candidate as ferromagnetic electrode in spintronics devices due to its high spin polarization and high Curie temperature. The use of Fe 3 Si in contact with a thin SiO 2 barrier can have various applications in practical devices, such as magnetic tunnel junctions. We report on the synthesis of Fe 3 Si/SiO 2 structures, in one vacuum cycle, by pulsed laser deposition and glow-discharge plasma oxidation followed by vacuum annealing. The structural and morphological characterization of the Fe 3 Si/SiO 2 stacks is performed by in-situ X-ray photoelectron spectroscopy and with atomic force microscopy. Using a 57 Fe tracer layer, conversion electron Mössbauer spectroscopy is performed at the Fe 3 Si/SiO 2 interface, proving the formation of a ferromagnetic phase with no paramagnetic inclusions. Our experimental results indicate that the Fe 3 Si/SiO 2 stack is a promising system for …