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Type: 
Journal
Description: 
In this report it is shown how the application of a Z-contrast STEM technique to the study of the dopant signal in ultra-shallow junctions in silicon can lead, in the case of arsenic in silicon, to a quantitative determination of the dopant depth distribution at a subnanometre level. This particular technique, whose main characteristics are briefly described, appears to usefully complement the information obtained with other spectroscopic techniques like SIMS and MEIS with apparently higher depth resolution. Beam broadening effects on the measured contrast profiles are observed and discussed.
Publisher: 
Publication date: 
1 May 2009
Authors: 

Andrea Parisini, Vittorio Morandi, Salvatore Mezzotero

Biblio References: 
Issue: 132 Pages: 19
Origin: 
Microscopy and Analysis-UK