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The amorphous to crystal transition temperature has been measured in capped () and uncapped (GST) films (thick) after irradiation with a in the range between and. In the capped samples the crystallization temperature increases with fluence (at). This effect is due to the doping of the GST layer with a few atom percent of recoiled O and Si atoms. The influence of the chemical species on the crystallization kinetics overcomes the effect of the ion-induced local rearrangement that instead decreases the transition temperature by a few degrees in the uncapped samples. Recoil implantation through the use of a thin capping layer may then be a viable alternative to the direct doping of chalcogenide thin films.
IOP Publishing
Publication date: 
21 Dec 2010

E Carria, AM Mio, S Gibilisco, M Miritello, MG Grimaldi, E Rimini

Biblio References: 
Volume: 14 Issue: 3 Pages: H124
Electrochemical and Solid State Letters