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Type: 
Patent
Description: 
A process is described for integrating two closely spaced thin films without deposition of the films through deep vias. The films may be integrated on a wafer and patterned to form a microscale heat-trimmable resistor. A thin-film heating element may be formed proximal to a thin-film resistive element, and heat generated by the thin-film heater can be used to permanently trim a resistance value of the thin-film resistive element. Deposition of the thin films over steep or abrupt topography is minimized by using a process in which the thin ...
Publisher: 
Publication date: 
15 Oct 2013
Authors: 

Olivier Le Neel, Stefania Maria Serena Privitera, Pascale Dumont-Girard, MaurizoGabriele Castorina, Calvin Leung, , Calvin Leung, , , Calvin Leung, , , , Calvin Leung

Biblio References: 
Origin: 
US8558654