In new and future generations of Non Volatile Memories such as Phase Change Memories (PCMs) and Resistive-RAMs (ReRAMs), having accurate and controllable program pulses is fundamental to adequately characterize the memory cell, since the obtained cell status is a function of the applied pulse parameters. In order to massively test new cells and enhance conventional instrumentation flexibility, an accurate on-chip pulse generator, which is able to provide pulses with different amplitude, falling time, and duration, has been designed, fabricated, and experimentally evaluated. The designed device can generate pulses with amplitude, fall time, and time duration programmable from 0.5 V to 4.5 V, from 10 ns to several μs, and from 50 ns to 350 ns, respectively.