Synthesis of advanced materials

The synthesis of advanced materials is one of the main activities of IMM. Several state of the art equipment are running in our Institute, as well as many methodologies for the realization of advanced materials are developed for various applications. Particular interest is devoted to low dimensional materials (0D, 1D e 2D, 3D) such as metals, oxides, Si and Ge nanoparticles, metal core-shell colloids; TiO₂, ZnO, CuO, Si, SiO₂, C nanowires, nanotubes and nanorods, core-(multi)shell III-V and chalcogenide nanowires; graphene, silicene, phosphorene, exagonal Boron nitride; graphene and NiO foams. All of these materials represent potential candidates for energy, environment, electronics, sensing, biomedical applications, and their use is inflected according to the specific function they have to assume. Furthermore, advanced materials, such as hybrid perovskites and transparent conductive oxides, are realized, also as nanostructures, for photovoltaics, whereas non conventional transition metal chalcogenides (MoS₂, WS₂) are developed for nanoelectronics. Flexible polymeric semiconductors are obtained for large area electronics and biomedicine, while polymeric nanocomposites are synthesized for photocatalytic applications aimed to environmental use and protection of the cultural heritage. Thin film synthesis is employed for realizing rare earth oxides and silicates, group IV semiconductor QDs in silica, undoped and rare earth doped Si oxycarbide for photonic applications. The synthesis activities are described in more details in the contributions of each Unit reported below.

Coordinator: Massimo Longo