AIXTRON mod. AIX200 MOVPE system for III-V compounds
The 20-years research experience in the field of materials synthesis has been focussed on the MOVPE growth initially of wide band-gap II-VI compound semiconductor heterostructures for applications to blue-green optoelectronics, and more recently of III-V and II-VI compound semiconductors based nano-structures synthesized by bottom-up approaches for applications to nano-/opto-electronics, sensing and photovoltaics.
The Epitaxial Growth Laboratory applies the Metal Organic Vapour Phase Epitaxy (MOVPE) technology for the growth of III-V semiconductor compounds by using an AIXTRON MOVPE reactor, model AIX200RD. It is a modular system equipped with:
- 2’’ dia. wafer chamber with a quartz liner and a pyrolitic graphite susceptor
- IR heating system up to 730°C
- no. 8 metalorganic and gaseous source lines
- thermostatic baths
- UHP H2 and N2 as carrier gas
- dry-box for samples loading
- dry scrubber for exhausts
- mass and pressures controllers
- Unix operating system for the automatic control of the growth process
The principal research activity of this Lab is devoted to the MOVPE growth of III-V nanowires by means of the Vapour Liquid Solid (VLS) method.
FE-SEM micrographs of GaAs/AlGaAs core-shell nanowires grown on different substrates. The insets are magnified plan-view images. The marker represents 1 micron.
III-V compound semiconductors based nano-structures are synthesized by bottom-up methods for applications to nano-/opto-electronics, sensing and photovoltaics (core-shell and core- multishell nanowires based on GaAs-AlGaAs)
Contact person: Paola Prete