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A new paper by E. Schilirò et al., published in the journal Carbon, provides a deep insigth on the nucleation phenomena of Al2O3 on the surface of epitaxial graphene on Silicon Carbide during the early stages of atomic layer deposition (ALD). Uniform and conformal insulating films with 2.4 nm thickness have been obtained.

These results are expected to have a significant impact for graphene applications in electronics and sensing.

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