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Resistive switching memory (RRAM) based on the redox-induced conductivity change in some metal oxides attracts considerable interest as a new technology for next-generation nonvolatile electronic storage. Although resistance-switching phenomena in several transition metal oxides have been known from decades, the details of the switching mechanisms and the nature of the different resistive states are still largely debated. For nonvolatile memory applications, the scaling potential of RRAMs is the most relevant issue, and understanding the scaling capability of RRAM devices requires a sound interpretation of resistance-switching operation and reliability aspects. This work addresses the scaling dependence of RRAM switching parameters. The dependence on the electrode area and on the size of the conductive filament (CF) responsible for low-resistance memory state is investigated. The RRAM conduction …
American Institute of Physics
Publication date: 
1 Feb 2011

Daniele Ielmini, S Spiga, Federico Nardi, Carlo Cagli, A Lamperti, E Cianci, M Fanciulli

Biblio References: 
Volume: 109 Issue: 3 Pages: 034506
Journal of Applied Physics