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Article PreviewArticle PreviewArticle PreviewA review of recently achieved results with the chloride-based CVD on 8 and 4 off axis and nominally on-axis 4H-SiC wafers is done to clarify the epitaxial growth mechanisms on different off-angle substrates. The process conditions selected for each off-axis angle become even more difficult when running at growth rates of 100 µm/h or more. A fine-tuning of process parameters mainly temperature, C/Si ratio and in situ surface preparation is necessary for each off-angle. Some trends related to the surface properties and the effective C/Si ratio existing on the surface prior to and during the epitaxial growth can be observed.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2012

Stefano Leone, Henrik Pedersen, Franziska Christine Beyer, Sven Andersson, Olof Kordina, Anne Henry, Andrea Canino, Francesco La Via, Erik Janzén

Biblio References: 
Volume: 717 Pages: 113-116
Materials Science Forum