-A A +A
Post-implant annealing of Al implanted 4H-SiC has been performed in the temperature range from 1600 C to 1750 C. Annealing was conducted in a hot-wall CVD reactor using a silanerich ambient. Ar was used as the carrier gas to deliver the silane to the annealing zone where the sample was heated via RF induction. The resulting annealed surfaces exhibited a step-bunch free, smooth morphology when viewed on SEM and AFM. The maximum surface roughness as measured via AFM was 0.65 nm RMS for the sample annealed at 1750 C.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2006

Shailaja P Rao, Fabio Bergamini, Roberta Nipoti, AM Hoff, E Oborina, Stephen E Saddow

Biblio References: 
Volume: 527 Pages: 839-842
Materials science forum