A pyrolyzed photoresist film is commonly used as a protective cap of the surface of ion-implanted wafers during the postimplantation annealing process with the aim to prevent Si sublimation and step bunching formation. Such a film that is called carbon-cap (C-cap) is always removed after postimplantation annealing and before any other processing step of the SiC wafer. Here, we show that this C-cap is a continuous, hard, black, mirrorlike, and planar thin film that can be patterned by a reactive ion etching-based plasma for the fabrication of ohmic contact pads on both-and-implanted. This C-cap material has an electrical resistivity of and a good resistance against scratch. Al (1% Si) wires can be ultrasonically bonded on the C-cap pads. Such a bonding and the C-cap adhesion to the implanted surface are stable for electrical characterizations in vacuum between room temperature and. The measured specific contact …