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A pyrolyzed photoresist film is commonly used as a protective cap of the surface of ion-implanted Formula wafers during the postimplantation annealing process with the aim to prevent Si sublimation and step bunching formation. Such a film that is called carbon-cap (C-cap) is always removed after postimplantation annealing and before any other processing step of the SiC wafer. Here, we show that this C-cap is a continuous, hard, black, mirrorlike, and planar thin film that can be patterned by a reactive ion etching Formula-based plasma for the fabrication of ohmic contact pads on both Formula-and Formula-implanted Formula. This C-cap material has an electrical resistivity of Formula and a good resistance against scratch. Al (1% Si) wires can be ultrasonically bonded on the C-cap pads. Such a bonding and the C-cap adhesion to the implanted Formula surface are stable for electrical characterizations in vacuum …
The Electrochemical Society
Publication date: 
1 Dec 2010
Biblio References: 
Volume: 13 Issue: 12 Pages: H432-H435
Electrochemical and Solid-State Letters