Design and development of a fNIRS system prototype based on SiPM detectors

Authors: 

D Sanfilippo, G Valvo, M Mazzillo, A Piana, B Carbone, L Renna, PG Fallica, D Agrò, G Morsellino, M Pinto, R Canicattì, N Galioto, A Tomasino, G Adamo, S Stivala, A Parisi, L Curcio, C Giaconia, AC Busacca, R Pagano, S Libertino, S Lombardo

Data supporting the role of electric field and electrode material on the improvement of the ageing effects in hydrogenated amorphous silicon solar cells

Authors: 

Andrea Scuto, Luca Valenti, Silvio Pierro, Marina Foti, Cosimo Gerardi, Anna Battaglia, Salvatore Lombardo

Silicon doped by molecular doping technique: role of the surface layers of doped Si on the electrical characteristics

Authors: 

Sebastiano Caccamo, Rosaria A Puglisi, Salvatore Di Franco, Luisa D’Urso, Valeria Indelicato, Markus Italia, Salvatore Pannitteri, Antonino La Magna

Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Authors: 

Patrick Fiorenza, Antonino La Magna, Marilena Vivona, Fabrizio Roccaforte

Morphological and electrical characterization of SixCryCzBv thin films

Authors: 

S Privitera, F Wang, C Niu, P Dumont-Girard, H Ding, K Liu, R Modica, C Bongiorno

Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift

Authors: 

M De Seta, G Capellini, M Ortolani, MICHELE Virgilio, GIUSEPPE Grosso, G Nicotra, P Zaumseil

Advanced residual stress analysis and FEM simulation on heteroepitaxial 3CSiC for MEMS application

Authors: 

R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via

Phase change mechanisms in Ge 2 Sb 2 Te 5

Authors: 

S Privitera, S Lombardo, C Bongiorno, E Rimini, A Pirovano

Defects induced anomalous breakdown kinetics in Pr 2 O 3 by micro-and nano-characterization

Authors: 

P Fiorenza, R Lo Nigro, V Raineri, S Lombardo, RG Toro, G Malandrino, IL Fragala

Effect of the miscut direction in (111) 3 C-Si C film growth on off-axis (111) Si

Authors: 

A Severino, M Camarda, G Condorelli, LMS Perdicaro, R Anzalone, M Mauceri, A La Magna, F La Via

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