III-V nanowires by self-assembly MOVPE technology for novel and efficient opto-electronic and photovoltaic devices

Authors: 

Nico Lovergine, Paola Prete

Unified drain-current model of complementary p-and n-type OTFTs

Authors: 

Fabrizio Torricelli, Matteo Ghittorelli, Matteo Rapisarda, Antonio Valletta, Luigi Mariucci, Stephanie Jacob, Romain Coppard, Eugenio Cantatore, Zsolt Miklós Kovács-Vajna, Luigi Colalongo

Thermal properties of In–Sb–Te films and interfaces for phase change memory devices

Authors: 

Roberto Fallica, Claudia Wiemer, Toni Stoycheva, Elena Cianci, Massimo Longo, Huu Tan Nguyen, Andrzej Kusiak, Jean-Luc Battaglia

Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge (001)

Authors: 

C Wiemer, A Debernardi, A Lamperti, A Molle, O Salicio, L Lamagna, M Fanciulli

W-like states of N uncoupled spins 1/2

Authors: 

ELENA Ferraro, A Napoli, MA Jivulescu, A Messina

Chemical vapor deposition growth of Fe 3 O 4 thin films and Fe/Fe 3 O 4 bi-layers for their integration in magnetic tunnel junctions

Authors: 

S Vangelista, R Mantovan, S Cocco, A Lamperti, O Salicio, M Fanciulli

Magnetic resonance characterization of silicon nanowires

Authors: 

Marco Fanciulli, Matteo Belli, Antonio Vellei, Carmen Canevali, Davide Rotta, Stefano Paleari, Martina Basini

Liquid crystal waveguide devices

Authors: 

Antonio D'Alessandro, Rita Asquini, Marco Trotta, Romeo Beccherelli

Atomic layer deposited TiO 2 for implantable brain-chip interfacing devices

Authors: 

E Cianci, S Lattanzio, G Seguini, S Vassanelli, M Fanciulli

Interface width evaluation in thin layered CoFeB/MgO multilayers including Ru or Ta buffer layer by X-ray reflectivity

Authors: 

A Lamperti, S-M Ahn, B Ocker, R Mantovan, D Ravelosona

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