Chapter 2-SiC Epitaxy-2.1 Homoepitaxial Growth-New Achievements on CVD Based Methods for SiC Epitaxial Growth

Authors: 

D Crippa, GL Valente, A Ruggiero, L Neri, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, G Abbondanza, G Abbagnale, A Veneroni, F Omarini, L Zamolo, M Masi, F Roccaforte, G Giannazzo, S Di Franco, F La Via

Systematic first principles calculations of the effects of stacking faults defects on the 4H-SiC band structure

Authors: 

Massimo Camarda, Andrea Canino, Andrea Severino, Antonino La Magna, Francesco La Via

Calibration of SiC Detectors for Nitrogen and Neon Plasma Emission Using Gas-Puff Target Sources

Authors: 

Alfio Torrisi, Przemyslaw W Wachulak, Andrzej Bartnik, Tomasz Fok, Łukasz Wȩgrzyński, Henryk Fiedorowicz, Massimo Mazzillo, Antonella Sciuto, Lorenzo Torrisi

Development of a thermal neutron detector based on scintillating fibers and silicon photomultipliers

Authors: 

Massimo Barbagallo, Luigi Cosentino, Giuseppe Greco, Rosa Maria Montereali, Alfio Pappalardo, Carlotta Scirè, Sergio Scirè, Maria Aurora Vincenti, Paolo Finocchiaro

Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality

Authors: 

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Filippo Giannazzo, Pawel Prystawko, Piotr Kruszewski, Marcin Krysko, Ewa Grzanka, Michał Leszczynski, Cristina Tudisco, Guglielmo Guido Condorelli, Fabrizio Roccaforte

Defect generation and evolution in laser processing of Si

Authors: 

Antonino La Magna, V Privitera, G Mannino, Guglielmo Fortunato, Massimo Cuscuna, BG Svensson, E Monakhov, K Kuitunen, J Slotte, F Tuomisto

Ab Initio Investigations of Textured Ni2Si Films on Silicon

Authors: 

Paola Alippi, Alessandra Alberti

Low temperature formation and evolution of a 10 nm amorphous Ni–Si layer on [001] silicon studied by in situ transmission electron microscopy

Authors: 

Alessandra Alberti, Corrado Bongiorno, Cristian Mocuta, Till Metzger, Corrado Spinella, Emanuele Rimini

Graphene integration with nitride semiconductors for high power and high frequency electronics

Authors: 

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pécz, R Yakimova, R Dagher, A Michon, Y Cordier

The effect of thermal treatments on the local geometry around indium in In and In+ C high dose implanted Si

Authors: 

F d’Acapito, Y Shimizu, S Scalese, M Italia, P Alippi, S Grasso

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