Growth of 3C-SiC on Si: influence of process pressure

Authors: 

Andrea Severino, Christopher L Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E Saddow

Correlations between crystal quality and electrical properties by means of simultaneous photoluminescence and photocurrent analysis

Authors: 

Stefania Privitera, Massimo Camarda, Nicolò Piluso, Ruggero Anzalone, Francesco La Via

Nanocrystal memory cell integration in a stand-alone 16-Mb nor flash device

Authors: 

Cosimo Gerardi, Valentina Ancarani, Rosario Portoghese, Stella Giuffrida, Marco Bileci, Gabriella Bimbo, Orazio Brafa, Domenico Mello, Giuseppe Ammendola, Elena Tripiciano, Rosaria Puglisi, Salvatore A Lombardo

In depth analysis of channel length, fin width (down to 10 nm) impacts on Fowler-Nordheim program/erase characteristics of Si-NC SOI FinFlash memories

Authors: 

L Perniola, J Razafindramora, E Nowak, P Scheiblin, C Jahan, M Gely, C Vizioz, F Allain, S Lombardo, C Bongiorno, G Reimbold, F Boulanger, B De Salvo, S Deleonibus

Laser assisted green synthesis of free standing reduced graphene oxides at the water–air interface

Authors: 

G Compagnini, P Russo, F Tomarchio, O Puglisi, L D’Urso, S Scalese

Growth rate effect on 3C-SiC film residual stress on (100) Si substrates

Authors: 

Ruggero Anzalone, Christopher Locke, J Carballo, Nicolò Piluso, Andrea Severino, Giuseppe D'Arrigo, AA Volinsky, Francesco La Via, Stephen E Saddow

STEM and EELS study of the Graphene/Bi 2 Se 3 Interface

Authors: 

DM Kepaptsoglou, D Gilks, L Lari, QM Ramasse, P Galindo, M Weinert, L Li, G Nicotra, VK Lazarov

CaCu 3 Ti 4 O 12 single crystals: insights on growth and nanoscopic investigation

Authors: 

Patrick Fiorenza, Vito Raineri, Stefan G Ebbinghaus, Raffaella Lo Nigro

PZT Films on Wafers and Fibers for MEMS Application

Authors: 

Ratnesh Thapliyal, Aude Pellision, Dmitry Logvinovich, Martin Amberg, Hans Josef Hug, Giuseppino Fortunato

Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC

Authors: 

Marilena Vivona, Kassem Al Assaad, Véronique Soulière, Filippo Giannazzo, Fabrizio Roccaforte, Gabriel Ferro

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