Type:
Book
Description:
In this paper, porous silicon layers of different porosity and thickness have been investigated by Raman spectroscopy. The spectral characteristics of the first order Raman scattering (line shape and peak position) were analyzed according to the phonon confinement model in order to estimate the size of the crystallite and evaluate the built-in strain in porous silicon.
Publisher:
Publication date:
1 Jan 2008
Biblio References:
Pages: 508-514
Origin:
Sensors And Microsystems