In this paper the realization and the characterization of a resonant cavity enhanced photodetector(RCE), completely silicon compatible and working at 1. 55 micron, is reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. In order to obtain a fabrication process completely compatible with standard CMOS silicon technology, a photodetector having copper(Cu) as Schottky metal has been realized. Performances devices in terms of responsivity, free spectral range, finesse are reported.