-A A +A
In this paper the realization and the characterization of a resonant cavity enhanced photodetector(RCE), completely silicon compatible and working at 1. 55 micron, is reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. In order to obtain a fabrication process completely compatible with standard CMOS silicon technology, a photodetector having copper(Cu) as Schottky metal has been realized. Performances devices in terms of responsivity, free spectral range, finesse are reported.
SPIE, P. O. BOX 10 Bellingham WA 98227-0010 USA
Publication date: 
1 Jan 2010

M Casalino, M Gioffre, G Coppola, M Iodice, L Moretti, I Rendina, L Sirleto

Biblio References: 
Volume: 7719
Proceedings of SPIE- The International Society for Optical Engineering