Recently, giant dielectric permittivities (ɛ ′  ∼ 104) have been found in several nonferroelectric materials such as CaCu3Ti4O12 (CCTO) (Subramanian et al., J. Solid State Chem. 151:323, 2000; Homes et al., Science 293:673, 2001), doped-NiO (Wu et al., Phys. Rev. Lett. 89:217601, 2002) systems (Li x Ti y Ni1 − x − y O, Li x Si y Ni1 − x − y O, Ki x Ti y Ni1 − x − y O), CuO, (Lin et al., Phys. Rev. B 72:014103, 2005; Sarkar et al., App. Phys. Lett. 92:142901, 2008) etc., and most important, the high ɛ ′ values of these materials are almost independent over a wide range of temperature. This is one of the most intriguing features for their implementations in microelectronics devices, and as a consequence …