2006 | IMM Container

Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, F Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa, Milo Barbera, Ricardo Reitano, Gaetano Foti, Francesco La Via

2006-01-01

Biblio references: Volume: 527 Pages: 179-182

Origin: Materials science forum

Nuove potenzialità nell’utilizzo di diatomee marine in applicazioni fotoniche

De STEFANO M

2006-01-01

Biblio references:

Origin: Giornate Scientifiche della Seconda Università di Napoli

Static foreground analysis to detect abandoned or removed objects.

Andrea Caroppo, Tommaso Martiriggiano, Marco Leo, Paolo Spagnolo, Tiziana D'Orazio

2006-01-01

Biblio references: Pages: 451-456

Origin: VISAPP (1)

Electron Transport and Dielectric Breakdown Kinetics in Pr2O3 High K Films

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Salvatore Lombardo, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà

2006-01-01

Biblio references: Volume: 46 Pages: 21-26

Origin: Advances in Science and Technology

Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes

Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi

2006-01-01

Biblio references: Volume: 527 Pages: 811-814

Origin: Materials science forum

Performance enhancement of Raman-based distributed temperature sensors using simplex codes

A new high-power and low-RIN Raman pump laser for improved performance in long-span unrepeated WDM transmission systems

Photonic micro and sub-micro structures in LiNbO3 crystals

Integrated Mach-Zehnder micro-interferometer for gas trace remote sensing

Optical Fiber Coated By Single-Walled Carbon Nanotubes For Toluene Detection In Water

SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor

Nuove potenzialità nell’utilizzo di diatomee marine in applicazioni fotoniche

Static foreground analysis to detect abandoned or removed objects.

Electron Transport and Dielectric Breakdown Kinetics in Pr2O3 High K Films

Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes

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