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Van der Waals Epitaxy of Ge-Sb-Te Alloys—A Powerful Way to Design 2D Heterostructures for Neuromorphic Applications

Fabrizio Arciprete, Jos Boschker, Stefano Cecchi, Eugenio Zallo, Valeria Bragaglia, Raffaella Calarco

2022-05-08

Biblio references:

Origin: Materials Research Society (MRS) Spring Meeting

Two dimensional Molybdenum disulfide (MoS2) : CVD Synthesis, characterization and opto-electronic properties

Tummala PinakaPani C Martella, A Lamperti, A Molle

2022-04-26

Biblio references: Volume: 2022 Issue: 1

Origin: 1/f noise from condensed matter physics to quantum technologies

Two-dimensional Molybdenum disulfide (MoS2): CVD Synthesis, characterization and opto-electronic properties

Pinaka Pani Tummala, Alessio Lamperti, Alessandro Molle

2022-04-25

Biblio references:

Origin: Ettore Majorana Foundation and Centre for Scientific Culture_Phenomenon of 1/f noise in condensed matter physics, Date: 2022/04/24-2022/04/29, Location: Erice (Italy)

(In-) Stability of Tin Halide Perovskites: Ab Initio Molecular Dynamics Simulations of Perovskite/Water Interfaces

Waldemar Kaiser, Damiano Ricciarelli, Edoardo Mosconi, Asma A Alothman, Francesco Ambrosio, Filippo De Angelis

2022-04-20

Biblio references:

Origin: Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV22)

Comparison between Hybrid-and TM-polarized Bessel-Beam Launchers for Wireless Power Transfer in the Radiative Near-field at Millimeter Waves

Francesca Benassi, Walter Fuscaldo, Edoardo Negri, Giacomo Paolini, Elisa Augello, Diego Masotti, Paolo Burghignoli, Alessandro Galli, Alessandra Costanzo

2022-04-04

Biblio references: Pages: 829-832

Origin: 2021 51st European Microwave Conference (EuMC)

Analysis of Resonant Bessel-Beam Launchers based on Isotropic Metasurfaces

Edoardo Negri, Walter Fuscaldo, Mauro Ettorre, Paolo Burghignoli, Alessandro Galli

2022-03-27

Biblio references: Pages: 1-4

Origin: 2022 16th European Conference on Antennas and Propagation (EuCAP)

Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs

Marcello Cioni, Patrick Fiorenza, Fabrizio Roccaforte, Mario Saggio, S Cascino, A Messina, Vincenzo Vinciguerra, Michele Calabretta, Alessandro Chini

2022-03-27

Biblio references: Pages: 5B. 3-1-5B. 3-6

Origin: 2022 IEEE International Reliability Physics Symposium (IRPS)

SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs

Patrick Fiorenza, C Bongiorno, A Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

2022-03-27

Biblio references: Pages: 3B. 3-1-3B. 3-5

Origin: 2022 IEEE International Reliability Physics Symposium (IRPS)

Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer

S Alessandrino, B Carbone, F Cordiano, B Mazza, A Russo, W Coco, M Boscaglia, A Di Salvo, A Lombardo, D Scarcella, E Vitanza, P Fiorenza

2022-03-27

Biblio references: Pages: P61-1-P61-4

Origin: 2022 IEEE International Reliability Physics Symposium (IRPS)

Synthesis of a Metasurface-based Bessel Beam Launcher at Microwaves and Millimeter Waves

Santi C Pavone, Walter Fuscaldo

2022-03-27

Biblio references: Pages: 1-3

Origin: 2022 16th European Conference on Antennas and Propagation (EuCAP)

Van der Waals Epitaxy of Ge-Sb-Te Alloys—A Powerful Way to Design 2D Heterostructures for Neuromorphic Applications

Two dimensional Molybdenum disulfide (MoS2) : CVD Synthesis, characterization and opto-electronic properties

Two-dimensional Molybdenum disulfide (MoS2): CVD Synthesis, characterization and opto-electronic properties

(In-) Stability of Tin Halide Perovskites: Ab Initio Molecular Dynamics Simulations of Perovskite/Water Interfaces

Comparison between Hybrid-and TM-polarized Bessel-Beam Launchers for Wireless Power Transfer in the Radiative Near-field at Millimeter Waves

Analysis of Resonant Bessel-Beam Launchers based on Isotropic Metasurfaces

Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs

SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs

Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer

Synthesis of a Metasurface-based Bessel Beam Launcher at Microwaves and Millimeter Waves

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