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Ambipolar semiconductors are attracting a great interest as building blocks for photovoltaics and logic applications. Field-effect transistors built on solution-processable ambipolar materials hold strong promise for the engineering of large-area low-cost logic circuits with a reduced number of devices components. Such devices still suffer from a number of obstacles including the challenging processing, the low Ion/Ioff, the unbalanced mobility, and the low gain in complementary metal–oxide–semiconductor (CMOS)-like circuits. Here, we demonstrate that the simple approach of blending commercially available n- and p-type polymers such as P(NDI2OD-T2), P3HT, PCD-TPT, PDVT-8, and IIDDT-C3 can yield high-performing ambipolar field-effect transistors with balanced mobilities and Ion/Ioff > 107. Each single component was studied separately and upon blending by means of electrical characterization, ambient …
American Chemical Society
Publication date: 
24 Dec 2018

Tim Leydecker, Marco A Squillaci, Fabiola Liscio, Emanuele Orgiu, Paolo Samorì

Biblio References: 
Volume: 31 Issue: 17 Pages: 6491-6498
Chemistry of Materials