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Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-band-gap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power-law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2–50 K. These …
American Physical Society
Publication date: 
25 Aug 2020

Mao Wang, A Debernardi, Wenxu Zhang, Chi Xu, Ye Yuan, Yufang Xie, Y Berencén, S Prucnal, M Helm, Shengqiang Zhou

Biblio References: 
Volume: 102 Issue: 8 Pages: 085204
Physical Review B